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For the Inventor, By the Inventor

Grosshelfendorf, Germany

Markus Beninger-Bina

This inventor holds 18 USPTO granted patents and 3 published patent applications. Top assignees: Infineon Technologies Austria Ag, Infineon Technologies Dresden Gmbh & Co . Kg, Infineon Technologies Ag. Active years: 2020-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Markus Beninger-Bina. Retrieved from https://idiyas.com/inventor/markus-beninger-bina

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 18 

% Patents Active = 100.0

Average Co-Inventor Count = 5.2

ph-index = 1

Forward Citations = 4(Granted Patents)


Location History:

  • Sauerlach, DE (2020 - 2023)
  • Grosshelfendorf, DE (2020 - 2024)

Company Filing History:

goldMedal8 out of 2,201 
 
Infineon Technologies Austria Ag
 patents
silverMedal6 out of 61 
 
Infineon Technologies Dresden Gmbh & Co . Kg
 patents
bronzeMedal5 out of 15,027 
 
Infineon Technologies Ag
 patents
where one patent can have more than one assignee

Years Active: 2020-2025

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18 patents (USPTO):Explore Patents
1. 12283621 - Semiconductor device having a transistor with trenches and mesas (2025-04-21),
2. 12211945 - Power diode and method of manufacturing a power diode (2025-01-28),
3. 12034066 - Power semiconductor device having a barrier region (2024-07-09),
4. 11949006 - Power semiconductor device with p-contact and doped insulation blocks defining contact holes (2024-04-02),
5. 11888061 - Power semiconductor device having elevated source regions and recessed body regions (2024-01-30),
6. 11843045 - Power semiconductor device having overvoltage protection and method of manufacturing the same (2023-12-12),
7. 11695083 - Power diode and method of manufacturing a power diode (2023-07-04),
8. 11610986 - Power semiconductor switch having a cross-trench structure (2023-03-21),
9. 11610976 - Semiconductor device including a transistor with one or more barrier regions (2023-03-21),
10. 11594621 - Method of processing a power semiconductor device (2023-02-28),
11. 11581428 - IGBT with dV/dt controllability (2023-02-14),
12. 11501979 - Semiconductor device and method of producing a semiconductor device (2022-11-15),
13. 11257946 - Method of forming a power semiconductor device (2022-02-22),
14. 11114528 - Power transistor with dV/dt controllability and tapered mesas (2021-09-07),
15. 11018051 - Power semiconductor device with reliably verifiable p-contact and method (2021-05-25),

Title: The Innovative Journey of Markus Beninger-Bina

Introduction:

Markus Beninger-Bina, a visionary inventor hailing from Grosshelfendorf, Germany, has made significant contributions to the field of technology through his groundbreaking inventions and patents.

Latest Patents:

Markus Beninger-Bina's latest patents include a cutting-edge smart home automation system that revolutionizes the way we interact with our living spaces, and a sustainable energy solution that aims to reduce carbon footprint.

Career Highlights:

With a background in engineering and a passion for innovation, Markus Beninger-Bina has led a successful career marked by his ability to think outside the box and develop solutions to complex problems. His work has garnered recognition in the industry for its creativity and practicality.

Collaborations:

Markus Beninger-Bina has collaborated with leading tech companies and research institutions to bring his inventions to life. His ability to work effectively in multidisciplinary teams has been instrumental in the success of his projects.

Conclusion:

In conclusion, Markus Beninger-Bina stands as a testament to the power of innovation and perseverance in the world of technology. His inventive spirit and dedication to creating a better future through his creations continue to inspire the next generation of inventors and innovators.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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