The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2023
Filed:
Oct. 23, 2020
Infineon Technologies Ag, Neubiberg, DE;
Alexander Philippou, Munich, DE;
Markus Beninger-Bina, Grosshelfendorf, DE;
Matteo Dainese, Villach, AT;
Christian Jaeger, Munich, DE;
Johannes Georg Laven, Taufkirchen, DE;
Francisco Javier Santos Rodriguez, Villach, AT;
Antonio Vellei, Villach, AT;
Caspar Leendertz, Munich, DE;
Christian Philipp Sandow, Haar, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A power semiconductor device includes an active cell region with a drift region of a first conductivity type, a plurality of IGBT cells arranged within the active cell region, each of the IGBT cells includes at least one trench that extends into the drift, an edge termination region surrounding the active cell region, a transition region arranged between the active cell region and the edge termination region, at least some of the IGBT cells are arranged within or extend into the transition region, a barrier region of a second conductivity type, the barrier region is arranged within the active cell region and in contact with at least some of the trenches of the IGBT cells and does not extend into the transition region, and a first load terminal and a second load terminal, the power semiconductor device is configured to conduct a load current along a vertical direction between.