Average Co-Inventor Count = 4.4

ph-index = 3

Forward Citations = 37(Granted Patents)

Location History:

Villach, AT (2016 - 2023)
Munich, DE (2021 - 2023)

Company Filing History:

28 out of 14,705

Infineon Technologies Ag

patents

14 out of 2,093

Infineon Technologies Austria Ag

patents

5 out of 61

Infineon Technologies Dresden Gmbh & Co . Kg

patents

4. 1 out of 278

Infineon Technologies Americas Corp.

patents

where one patent can have more than one assignee

Years Active: 2016-2023

where 'Filed Patents' based on already Granted Patents

45 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 11848377 - Semiconductor component with edge termination region (2023-12-19),

2. 11843045 - Power semiconductor device having overvoltage protection and method of manufacturing the same (2023-12-12),

3. 11695083 - Power diode and method of manufacturing a power diode (2023-07-04),

4. 11610986 - Power semiconductor switch having a cross-trench structure (2023-03-21),

5. 11610976 - Semiconductor device including a transistor with one or more barrier regions (2023-03-21),

6. 11594621 - Method of processing a power semiconductor device (2023-02-28),

7. 11581428 - IGBT with dV/dt controllability (2023-02-14),

8. 11495680 - Semiconductor device with integrated current sensor (2022-11-08),

9. 11296213 - Reverse-conducting igbt having a reduced forward recovery voltage (2022-04-05),

10. 11257946 - Method of forming a power semiconductor device (2022-02-22),

11. 11114528 - Power transistor with dV/dt controllability and tapered mesas (2021-09-07),

12. 11075291 - Isolation structure for IGBT devices having an integrated diode (2021-07-27),

13. 11075290 - Power semiconductor device having a cross-trench arrangement (2021-07-27),

14. 11018249 - Semiconductor component with edge termination region (2021-05-25),

15. 11018051 - Power semiconductor device with reliably verifiable p-contact and method (2021-05-25),

Certainly! Here is an article about inventor Matteo Dainese:

Title: Matteo Dainese: Pioneering Innovations in Semiconductor Technology

Introduction:

Matteo Dainese, a visionary inventor based in Villach, Austria, stands as a beacon of creativity and ingenuity in the world of semiconductor technology. With an impressive portfolio of 45 patents, Dainese's contributions have redefined the landscape of power semiconductor devices. His innovative spirit and dedication to pushing the boundaries of conventional thinking have inspired countless individuals to embrace innovation and shape a better future for all.

Latest Patents:

1. Semiconductor component with edge termination region: Dainese's groundbreaking semiconductor component features an active region with enhanced edge termination structures, optimizing performance and reliability.

2. Power semiconductor device with overvoltage protection: Dainese's chip design incorporates breakthrough cells with precise barrier regions and contact regions, ensuring robust overvoltage protection mechanisms.

Career Highlights:

Dainese has made significant contributions to the field of semiconductor technology through his work at Infineon Technologies Ag and Infineon Technologies Dresden GmbH & Co. Kg. During his tenure at these renowned companies, Dainese has played a pivotal role in developing cutting-edge semiconductor solutions that have set new industry standards.

Collaborations:

Throughout his career, Dainese has collaborated closely with esteemed professionals such as Johannes Georg Laven and Hans-Joachim Schulze. Together, they have leveraged their collective expertise to drive innovation and foster a culture of continuous improvement in semiconductor technology.

Conclusion:

Matteo Dainese's remarkable journey as an inventor serves as a testament to the power of innovation and perseverance in shaping the future of technology. His relentless pursuit of excellence and unwavering commitment to advancement inspire individuals worldwide to think outside the box and make a lasting impact in the realm of inventions and innovations.

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