Villach, Austria

Matteo Dainese

This inventor holds 45 USPTO granted patents, primarily in Power Semiconductors. Top assignees: Infineon Technologies Ag, Infineon Technologies Austria Ag, Infineon Technologies Dresden Gmbh & Co . Kg. Active years: 2016-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Matteo Dainese. Retrieved from https://idiyas.com/inventor/matteo-dainese

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 93.3

Average Co-Inventor Count = 4.4

ph-index = 3

Forward Citations = 39(Granted Patents)


Location History:

  • Villach, AT (2016 - 2023)
  • Munich, DE (2021 - 2023)

Company Filing History:


Years Active: 2016-2023

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Areas of Expertise:
Power Semiconductor
IGBT
Overvoltage Protection
Edge Termination
Transistor
Barrier Regions
Cross-Trench Structure
Integrated Current Sensor
Reverse-Blocking IGBT
Isolation Structure
Dielectric Support Structures
Enhanced Control Signals
45 patents (USPTO):Explore Patents

Certainly! Here is an article about inventor Matteo Dainese:

Title: Matteo Dainese: Pioneering Innovations in Semiconductor Technology

Introduction:

Matteo Dainese, a visionary inventor based in Villach, Austria, stands as a beacon of creativity and ingenuity in the world of semiconductor technology. With an impressive portfolio of 45 patents, Dainese's contributions have redefined the landscape of power semiconductor devices. His innovative spirit and dedication to pushing the boundaries of conventional thinking have inspired countless individuals to embrace innovation and shape a better future for all.

Latest Patents:

1. Semiconductor component with edge termination region: Dainese's groundbreaking semiconductor component features an active region with enhanced edge termination structures, optimizing performance and reliability.

2. Power semiconductor device with overvoltage protection: Dainese's chip design incorporates breakthrough cells with precise barrier regions and contact regions, ensuring robust overvoltage protection mechanisms.

Career Highlights:

Dainese has made significant contributions to the field of semiconductor technology through his work at Infineon Technologies Ag and Infineon Technologies Dresden GmbH & Co. Kg. During his tenure at these renowned companies, Dainese has played a pivotal role in developing cutting-edge semiconductor solutions that have set new industry standards.

Collaborations:

Throughout his career, Dainese has collaborated closely with esteemed professionals such as Johannes Georg Laven and Hans-Joachim Schulze. Together, they have leveraged their collective expertise to drive innovation and foster a culture of continuous improvement in semiconductor technology.

Conclusion:

Matteo Dainese's remarkable journey as an inventor serves as a testament to the power of innovation and perseverance in shaping the future of technology. His relentless pursuit of excellence and unwavering commitment to advancement inspire individuals worldwide to think outside the box and make a lasting impact in the realm of inventions and innovations.

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Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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