The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 05, 2022

Filed:

Mar. 20, 2020
Applicant:

Infineon Technologies Austria Ag, Villach, AT;

Inventors:

Christian Philipp Sandow, Haar, DE;

Wolfgang Roesner, Ottobrunn, DE;

Matteo Dainese, Munich, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7397 (2013.01); H01L 29/41708 (2013.01); H01L 29/4236 (2013.01); H01L 29/66348 (2013.01);
Abstract

According to an embodiment of a power semiconductor device, the device includes: a semiconductor substrate including an IGBT region having an IGBT and a diode region having a diode. The IGBT region includes a plurality of first trenches extending perpendicular to a first main surface of the semiconductor substrate. The diode region includes a plurality of second trenches extending perpendicular to the first main surface of the semiconductor substrate. An average lateral spacing between adjacent ones of the second trenches is greater than an average lateral spacing between adjacent ones of the first trenches. Additional power semiconductor device embodiments are described herein, as are corresponding methods of production.


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