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Ottobrunn, Germany

Wolfgang Roesner

This inventor holds 40 USPTO granted patents and 1 published patent application, primarily in Semiconductor Devices. Top assignees: Infineon Technologies Ag, Siemens Aktiengesellschaft, Infineon Technologies Austria Ag. Active years: 1995-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wolfgang Roesner. Retrieved from https://idiyas.com/inventor/wolfgang-roesner-ya70sqe9

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 40 

% Patents Active = 60.0

Average Co-Inventor Count = 3.5

ph-index = 11

Forward Citations = 384(Granted Patents)


Location History:

  • Munich, DE (1995 - 2002)
  • München, DE (2001 - 2002)
  • Ottobrunn, DE (2004 - 2022)

Company Filing History:

goldMedal16 out of 15,036 
 
Infineon Technologies Ag
 patents
silverMedal13 out of 30,886 
 
Siemens Aktiengesellschaft
 patents
bronzeMedal6 out of 2,207 
 
Infineon Technologies Austria Ag
 patents
4. 5 out of 555 
 
Qimonda Ag
 patents

Years Active: 1995-2025

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Areas of Expertise:
Insulated Gate Bipolar Transistor
Integrated Circuit
DRAM Cell Configuration
Field-Effect Transistor
Charge-Trapping Memory
Vertical Transistor
Power Semiconductor Diode
Microelectronic Component
High-Density Memory
Electronic Switching Element
Interconnect Structure
MOS Transistor
40 patents (USPTO):Explore Patents
1. 12224316 - Semiconductor device including insulated gate bipolar transistor (2025-02-11),
2. 11444158 - Semiconductor device including an anode contact region having a varied doping concentration (2022-09-13),
3. 11296213 - Reverse-conducting igbt having a reduced forward recovery voltage (2022-04-05),
4. 11004963 - Insulated gate bipolar transistor having first and second field stop zone portions and manufacturing method (2021-05-11),
5. 10103227 - Method for manufacturing a power semiconductor device (2018-10-16),
6. 9768766 - Electronic switching element and integrated sensor (2017-09-19),
7. 9543398 - Semiconductor switching device including charge storage structure (2017-01-10),
8. 8809902 - Power semiconductor diode, IGBT, and method for manufacturing thereof (2014-08-19),
9. 8138538 - Interconnect structure for semiconductor devices (2012-03-20),
10. 7838925 - Integrated circuit including a vertical transistor and method (2010-11-23),
11. 7829892 - Integrated circuit including a gate electrode (2010-11-09),
12. 7700427 - Integrated circuit having a Fin structure (2010-04-20),
13. 7611928 - Method for producing a substrate (2009-11-03),
14. 7598543 - Semiconductor memory component with body region of memory cell having a depression and a graded dopant concentration (2009-10-06),
15. 7560351 - Integrated circuit arrangement with low-resistance contacts and method for production thereof (2009-07-14),

Sure, I can help you with that. Here is an article about inventor Wolfgang Roesner:

Title: The Innovative Mind of Wolfgang Roesner

Introduction:

Wolfgang Roesner, a prolific inventor based in Ottobrunn, Germany, has made significant contributions to the field of semiconductor devices with a remarkable portfolio of 39 patents. His groundbreaking work continues to shape the landscape of advanced technology.

Latest Patents:

1. "Semiconductor device including an anode contact region having a varied doping concentration": This patent introduces a semiconductor device comprising an IGBT and a diode, offering novel methods of manufacturing for enhanced performance.

2. "Reverse-conducting IGBT having a reduced forward recovery voltage": Roesner's invention features a power semiconductor device with optimized trench structures in IGBT and diode regions, improving overall efficiency.

Career Highlights:

With a career spanning years of dedication and innovation, Wolfgang Roesner has left an indelible mark on the industry. He has worked with renowned companies such as Infineon Technologies AG and Siemens Aktiengesellschaft, showcasing his expertise in developing cutting-edge technologies.

Collaborations:

Throughout his journey, Roesner has collaborated with esteemed professionals like Franz Hofmann and Lothar Risch. Together, they have synergized their knowledge and skills to drive forward groundbreaking inventions in the semiconductor domain.

Conclusion:

In conclusion, Wolfgang Roesner's inventive spirit and remarkable achievements in the field of semiconductor devices underscore his status as a pioneering figure in the realm of technological advancements. His relentless pursuit of innovation continues to inspire and shape the future of the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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