The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2021
Filed:
Nov. 28, 2018
Infineon Technologies Ag, Neubiberg, DE;
Oana Julia Spulber, Neubiberg, DE;
Matthias Kuenle, Villach, AT;
Wolfgang Roesner, Ottobrunn, DE;
Christian Philipp Sandow, Haar, DE;
Christoph Weiss, Munich, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
An embodiment relates to a method of manufacturing an insulated gate bipolar transistor in a semiconductor body. A first field stop zone portion of a first conductivity type is formed on a semiconductor substrate. A second field stop zone portion of the first conductivity type is formed on the first field stop zone portion. A drift zone of the first conductivity type is formed on the second field stop zone portion. A doping concentration in the drift zone is smaller than 10cmalong a vertical extension of more than 30% of a thickness of the semiconductor body upon completion of the insulated gate bipolar transistor.