The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 09, 2010

Filed:

Oct. 29, 2007
Applicants:

Richard Johannes Luyken, Munich, DE;

Franz Hofmann, Munich, DE;

Lothar Risch, Neubiberg, DE;

Dirk Manger, Dresden, DE;

Wolfgang Roesner, Ottobrunn, DE;

Till Schloesser, Dresden, DE;

Michael Specht, Munich, DE;

Inventors:

Richard Johannes Luyken, Munich, DE;

Franz Hofmann, Munich, DE;

Lothar Risch, Neubiberg, DE;

Dirk Manger, Dresden, DE;

Wolfgang Roesner, Ottobrunn, DE;

Till Schloesser, Dresden, DE;

Michael Specht, Munich, DE;

Assignee:

Qimonda AG, Munich, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/12 (2006.01);
U.S. Cl.
CPC ...
Abstract

An integrated circuit including a gate electrode is disclosed. One embodiment provides a transistor including a first source/drain electrode and a second source/drain electrode. A channel is arranged between the first and the second source/drain electrode in a semiconductor substrate. A gate electrode is arranged adjacent the channel layer and is electrically insulated from the channel layer. A semiconductor substrate electrode is provided on a rear side. The gate electrode encloses the channel layer at least two opposite sides.


Find Patent Forward Citations

Loading…