Munich, Germany

Franz Hofmann


 

Average Co-Inventor Count = 3.0

ph-index = 21

Forward Citations = 2,683(Granted Patents)

DiyaCoin DiyaCoin 1.95 


Inventors with similar research interests:


Location History:

  • Sunching, DE (1995)
  • Suenching, DE (1995)
  • Munchen, DE (1998 - 2000)
  • M{umlaut over (u)}nchen, DE (2001)
  • Muchen, DE (2007)
  • München, DE (2001 - 2013)
  • Munich, DE (1995 - 2019)

Company Filing History:


Years Active: 1995-2019

where 'Filed Patents' based on already Granted Patents

119 patents (USPTO):

Title: Franz Hofmann: Pioneering Innovator with 119 Patents

Introduction:

Franz Hofmann, based in Munich, Germany, is a prominent name in the field of semiconductor technology. With an impressive portfolio of 119 patents to his name, he has contributed significantly to the advancement of this industry. This article explores Franz Hofmann's latest patents, career highlights, collaborations, and unveils his significant contributions to the world of innovation.

Latest Patents:

Among Hofmann's recent patents, two notable inventions stand out. The first is an antifuse cell comprising a program transistor and select transistor arranged on opposite sides of a semiconductor layer. This semiconductor structure allows for efficient programming and selection, enhancing the performance of electronic devices that utilize such cells.

The second patent of note is related to an SOI finfet with reduced fin width dependence. This invention presents a method for polarizing finfet transistors, ensuring that variations in fin width do not significantly impact their off-current values. Such technology is crucial in maintaining consistency and reliability within complex semiconductor devices.

Career Highlights:

Throughout his career, Hofmann has made significant contributions while working for renowned companies in the semiconductor industry. His expertise has been harnessed by Infineon Technologies AG, where he played a pivotal role in shaping the development of cutting-edge semiconductor technologies. He has also been associated with Siemens Aktiengesellschaft (Siemens AG), contributing to the company's technological advancements.

Collaborations:

Collaboration plays a crucial role in innovation, and Hofmann is no stranger to fruitful partnerships. He has worked closely with esteemed colleagues such as Wolfgang Krautschneider and Josef Willer. The combined efforts of these talented individuals have undoubtedly propelled semiconductor technology forward, resulting in tangible advancements and patents.

Conclusion:

Franz Hofmann's outstanding contributions to semiconductor technology have left an indelible mark on the industry. With an impressive patent portfolio spanning 119 inventions, he has exemplified a relentless pursuit of innovation and a commitment to pushing the boundaries of what is possible in the field. Through collaborations with esteemed colleagues and working with prominent companies like Infineon Technologies AG and Siemens Aktiengesellschaft, Hofmann has cemented his reputation as a pioneering innovator. His inventions, including the antifuse cell and the SOI finfet with reduced fin width dependence, have opened new avenues for technological progress. It is evident that Franz Hofmann's contributions will continue to inspire future inventors and shape the landscape of semiconductor technology for years to come.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…