The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 17, 2012

Filed:

May. 31, 2005
Applicants:

Wolfgang Rösner, München, DE;

Franz Hofmann, München, DE;

Michael Specht, München, DE;

Martin Städele, Ottobrunn, DE;

Johannes Luyken, München, DE;

Inventors:

Wolfgang Rösner, München, DE;

Franz Hofmann, München, DE;

Michael Specht, München, DE;

Martin Städele, Ottobrunn, DE;

Johannes Luyken, München, DE;

Assignee:

Qimonda AG, Munich, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/119 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor memory device comprises a plurality of memory cells, each memory cell having a respective transistor. The transistor comprises a transistor body of a first conductivity type, a drain area and a source area each having a second conductivity type, wherein said drain area and source area are embedded in the transistor body on a first surface of said transistor body, a gate structure having a gate dielectric layer and a gate electrode. Said gate structure is arranged between said drain area and said source area. An emitter area of said first conductivity type is provided wherein said emitter area is arranged on top of said drain area.


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