Martin Städele

Title: Martin Städele: Innovator in Semiconductor Technology

Introduction

Martin Städele is a notable inventor based in Ottobrunn, Germany. He has made significant contributions to the field of semiconductor technology, holding two patents that showcase his innovative spirit and technical expertise.

Latest Patents

Städele's latest patents include a semiconductor memory device and a floating gate field-effect transistor. The semiconductor memory device comprises a plurality of memory cells, each with a respective transistor. This transistor features a body of a first conductivity type, with drain and source areas of a second conductivity type embedded within it. The gate structure, which includes a gate dielectric layer and a gate electrode, is arranged between the drain and source areas. The floating gate field-effect transistor, which is preferably used as a memory cell, includes an electrically insulating layer sequence above or below a floating gate region. This sequence consists of layers with varying relative permittivities, enhancing the device's performance.

Career Highlights

Throughout his career, Martin Städele has worked with prominent companies in the semiconductor industry, including Infineon Technologies AG and Qimonda AG. His experience in these organizations has allowed him to develop and refine his innovative ideas, contributing to advancements in memory technology.

Collaborations

Städele has collaborated with notable colleagues such as Michael Specht and Wolfgang Rösner. These partnerships have fostered a creative environment that has led to the development of groundbreaking technologies in the semiconductor field.

Conclusion

Martin Städele's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the industry. His work continues to impact the development of advanced memory devices.