The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2009
Filed:
Oct. 18, 2004
Franz Hofmann, Munich, DE;
Richard Johannes Luyken, Munich, DE;
Wolfgang Roesner, Ottobrunn, DE;
Michael Specht, Munich, DE;
Martin Stadele, Ottobrunn, DE;
Franz Hofmann, Munich, DE;
Richard Johannes Luyken, Munich, DE;
Wolfgang Roesner, Ottobrunn, DE;
Michael Specht, Munich, DE;
Martin Stadele, Ottobrunn, DE;
Infineon Technologies AG, , DE;
Abstract
Substrate having a first partial substrate with a carrier layer and a second partial substrate, which is bonded to the first partial substrate. The second partial substrate has an insulator layer, which is applied on the carrier layer and has at least two regions each having a different thickness, thereby forming a stepped surface of the insulator layer, and a semiconductor layer, which is applied to the stepped surface of the insulator layer and is formed at least partially epitaxially, wherein the semiconductor layer has a planar surface which is opposite to the stepped surface of the insulator layer. Transistors are formed on the semiconductor layer.