The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2005
Filed:
Nov. 21, 2002
Michael Specht, München, DE;
Martin Städele, Ottobrunn, DE;
Wolfgang Rösner, Ottobrunn, DE;
Franz Hofmann, München, DE;
Michael Specht, München, DE;
Martin Städele, Ottobrunn, DE;
Wolfgang Rösner, Ottobrunn, DE;
Franz Hofmann, München, DE;
Infineon Technologies AG, , DE;
Abstract
A floating gate field-effect transistor (), which is preferably used as a memory cell, has, above or below a floating gate region (), an electrically insulating layer sequence () having a lower layer () having a first relative permittivity, having a middle layer () having a second relative permittivity, and having an upper layer () having a third relative permittivity, the second relative permittivity being greater than the first relative permittivity and greater than the third relative permittivity.