The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2019
Filed:
Jul. 04, 2013
Applicant:
Soitec, Crolles, FR;
Inventor:
Franz Hofmann, Munich, DE;
Assignee:
SOITEC, Bernin, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11 (2006.01); H01L 21/70 (2006.01); H01L 27/112 (2006.01); G11C 17/16 (2006.01); H01L 27/10 (2006.01); H01L 27/12 (2006.01); H01L 23/525 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11206 (2013.01); G11C 17/16 (2013.01); H01L 27/101 (2013.01); H01L 27/11286 (2013.01); H01L 27/1203 (2013.01); H01L 23/5252 (2013.01); H01L 2924/0002 (2013.01);
Abstract
The disclosure relates to a semiconductor structure comprising: a first semiconductor layer, a first program transistor, and a first select transistor implementing a first antifuse cell, wherein the first semiconductor layer acts as the body of the first program transistor and as the body of the first select transistor, wherein a gate of the first program transistor and a gate of the first select transistor are on different sides of the first semiconductor layer.