The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2017
Filed:
Sep. 10, 2013
Applicant:
Soitec, Crolles, FR;
Inventor:
Franz Hofmann, Munich, DE;
Assignee:
Soitec, Bernin, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/78 (2006.01); H01L 27/12 (2006.01); H01L 27/02 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7856 (2013.01); H01L 27/0214 (2013.01); H01L 27/0886 (2013.01); H01L 27/1211 (2013.01); H01L 29/66795 (2013.01); H01L 29/7855 (2013.01);
Abstract
The present invention relates to a method for polarizing at least a first finfet transistor and a second finfet transistor, wherein the first finfet transistor has a fin width bigger than the fin width of the second finfet transistor, and both the first finfet transistor and the second finfet transistor have a back gate, and the method comprising applying the same first voltage on the back gate of the first finfet transistor and on the back gate of the second finfet transistor so as to reduce the spread between the off-current value of the first finfet transistor and the off-current value of the second finfet transistor.