The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2012
Filed:
Oct. 10, 2008
Hans-peter Moll, Dresden, DE;
Gouri Sankar Kar, Dresden, DE;
Martin Popp, Dresden, DE;
Lars Heineck, Radebeul, DE;
Peter Lahnor, Dresden, DE;
Arnd Scholz, Dresden, DE;
Stefan Jakschik, Dresden, DE;
Wolfgang Roesner, Ottobrunn, DE;
Gerhard Enders, Olching, DE;
Werner Graf, Dresden, DE;
Peter Baars, Dresden, DE;
Klaus Muemmler, Dresden, DE;
Bernd Hintze, Langebrueck, DE;
Andrei Josiek, Dresden, DE;
Hans-Peter Moll, Dresden, DE;
Gouri Sankar Kar, Dresden, DE;
Martin Popp, Dresden, DE;
Lars Heineck, Radebeul, DE;
Peter Lahnor, Dresden, DE;
Arnd Scholz, Dresden, DE;
Stefan Jakschik, Dresden, DE;
Wolfgang Roesner, Ottobrunn, DE;
Gerhard Enders, Olching, DE;
Werner Graf, Dresden, DE;
Peter Baars, Dresden, DE;
Klaus Muemmler, Dresden, DE;
Bernd Hintze, Langebrueck, DE;
Andrei Josiek, Dresden, DE;
Qimonda AG, Munich, DE;
Abstract
One embodiment relates to an integrated circuit formed on a semiconductor body having interconnect between source/drain regions of a first and second transistor. The interconnect includes a metal body arranged underneath the surface of the semiconductor body. A contact element establishes electrical contact between the metal body and the source/drain regions of the first and second transistor. The contact element extends along a connecting path between the source/drain regions of the first and second transistors. Other methods, devices, and systems are also disclosed.