The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2017
Filed:
Jul. 31, 2015
Infineon Technologies Ag, Neubiberg, DE;
Johannes Georg Laven, Taufkirchen, DE;
Anton Mauder, Kolbermoor, DE;
Matteo Dainese, Villach, AT;
Franz Hirler, Isen, DE;
Christian Jaeger, Munich, DE;
Maximilian Roesch, St. Magdalen, AT;
Wolfgang Roesner, Ottobrunn, DE;
Martin Stiftinger, Stockdorf, DE;
Robert Strenz, Radebeul, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A semiconductor switching device includes a first load terminal electrically connected to source zones of transistor cells. The source zones form first pn junctions with body zones. A second load terminal is electrically connected to a drain construction that forms second pn junctions with the body zones. Control structures, which include a control electrode and charge storage structures, directly adjoin the body zones. The control electrode controls a load current through the body zones. The charge storage structures insulate the control electrode from the body zones and contain a control charge adapted to induce inversion channels in the body zones in the absence of a potential difference between the control electrode and the first load electrode.