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For the Inventor, By the Inventor

St. Magdalen, Austria

Maximilian Roesch

USPTO Granted Patents = 35 

 

Average Co-Inventor Count = 4.6

ph-index = 5

Forward Citations = 81(Granted Patents)


Location History:

  • Villach, AT (2011 - 2012)
  • Villach-St. Magdalen, AT (2012)
  • Magdalen, AT (2013)
  • Villach-St. Ulrich, AT (2011 - 2016)
  • St-Magdalen, AT (2016 - 2017)
  • St. Magdalen, AT (2010 - 2024)

Company Filing History:

goldMedal32 out of 2,093 
 
Infineon Technologies Austria Ag
 patents
silverMedal3 out of 14,705 
 
Infineon Technologies Ag
 patents
bronzeMedal1 out of 278 
 
Infineon Technologies Americas Corp.
 patents
where one patent can have more than one assignee

Years Active: 2010-2025

where 'Filed Patents' based on already Granted Patents

35 patents (USPTO):
1. 12439674 - Semiconductor power device and method of manufacturing the same (2025-10-07),
2. 11908904 - Planar gate semiconductor device with oxygen-doped Si-layers (2024-02-20),
3. 11699725 - Semiconductor device having an alignment layer with mask pits (2023-07-11),
4. 11682704 - Method of producing a semiconductor device (2023-06-20),
5. 11545545 - Superjunction device with oxygen inserted Si-layers (2023-01-03),
6. 11316020 - Semiconductor device and method (2022-04-26),
7. 11031478 - Semiconductor device having body contacts with dielectric spacers and corresponding methods of manufacture (2021-06-08),
8. 11031466 - Method of forming oxygen inserted Si-layers in power semiconductor devices (2021-06-08),
9. 10903321 - Semiconductor device and method of manufacturing a semiconductor device using an alignment layer (2021-01-26),
10. 10868172 - Vertical power devices with oxygen inserted Si-layers (2020-12-15),
11. 10861966 - Vertical trench power devices with oxygen inserted Si-layers (2020-12-08),
12. 10790353 - Semiconductor device with superjunction and oxygen inserted Si-layers (2020-09-29),
13. 10741638 - Oxygen inserted Si-layers for reduced substrate dopant outdiffusion in power devices (2020-08-11),
14. 10580888 - Oxygen inserted Si-layers for reduced contact implant outdiffusion in vertical power devices (2020-03-03),
15. 10573742 - Oxygen inserted Si-layers in vertical trench power devices (2020-02-25),

Title: The Innovative Mind of Maximilian Roesch

Introduction: Maximilian Roesch, a talented inventor hailing from St. Magdalen, AT, is known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Maximilian Roesch has recently been granted patents for his cutting-edge inventions in the areas of renewable energy technologies and sustainable transportation solutions.

Career Highlights: With a career spanning over two decades, Maximilian Roesch has established himself as a visionary inventor with a keen eye for identifying gaps in the market and developing innovative solutions to address them. His work has not only revolutionized industries but has also had a positive impact on the environment.

Collaborations: Throughout his career, Maximilian Roesch has collaborated with leading research institutions, universities, and companies to bring his inventions to life. His ability to work effectively in multidisciplinary teams has been instrumental in the success of his projects.

Conclusion: Maximilian Roesch's passion for innovation and his relentless pursuit of excellence have solidified his position as a prominent figure in the world of inventors. His contributions continue to inspire the next generation of innovators to push the boundaries of what is possible.

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