The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2021
Filed:
Jan. 23, 2018
Infineon Technologies Austria Ag, Villach, AT;
Wei-Chun Huang, Torrance, CA (US);
Martin Poelzl, Ossiach, AT;
Thomas Feil, Villach, AT;
Maximilian Roesch, St. Magdalen, AT;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A semiconductor device includes a trench extending into a first main surface of a semiconductor substrate, and a gate electrode and a gate dielectric in the trench. The gate dielectric separates the gate electrode from the semiconductor substrate. A first region having a first conductivity type is formed in the semiconductor substrate at the first surface adjacent the trench. A second region having a second conductivity type is formed in the semiconductor substrate below the first region adjacent the trench. A third region having the first conductivity type is formed in the semiconductor substrate below the second region adjacent the trench. A contact opening in the semiconductor substrate extends into the second region. An electrically insulative spacer is disposed on sidewalls of the semiconductor substrate formed by the contact opening, and an electrically conductive material in the contact opening adjoins the electrically insulative spacer on the sidewalls.