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For the Inventor, By the Inventor

Ossiach, Austria

Martin Poelzl

USPTO Granted Patents = 92 

 

Average Co-Inventor Count = 2.5

ph-index = 9

Forward Citations = 357(Granted Patents)

Forward Citations (Not Self Cited) = 325(Oct 12, 2025)


Inventors with similar research interests:


Location History:

  • Ossicah, AT (2011)
  • Oissach, AT (2014)
  • Osslach, AT (2017)
  • Ossiach, DE (2017)
  • Ossiach, AT (2004 - 2024)

Company Filing History:

goldMedal66 out of 2,093 
 
Infineon Technologies Austria Ag
 patents
silverMedal26 out of 14,705 
 
Infineon Technologies Ag
 patents
bronzeMedal1 out of 278 
 
Infineon Technologies Americas Corp.
 patents
where one patent can have more than one assignee

Years Active: 2004-2024

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92 patents (USPTO):
1. 12119400 - Semiconductor transistor device and method of manufacturing the same (2024-10-15),
2. 12087717 - Semiconductor package and methods of manufacturing a semiconductor package (2024-09-10),
3. 12080789 - Semiconductor die and method of manufacturing the same (2024-09-03),
4. 11848237 - Composite wafer, semiconductor device and electronic component (2023-12-19),
5. 11699725 - Semiconductor device having an alignment layer with mask pits (2023-07-11),
6. 11552016 - Semiconductor device with metallization structure on opposite sides of a semiconductor portion (2023-01-10),
7. 11545545 - Superjunction device with oxygen inserted Si-layers (2023-01-03),
8. 11316043 - Semiconductor transistor device and method of manufacturing the same (2022-04-26),
9. 11302579 - Composite wafer, semiconductor device and electronic component (2022-04-12),
10. 11081457 - Semiconductor package and methods of manufacturing a semiconductor package (2021-08-03),
11. 11031478 - Semiconductor device having body contacts with dielectric spacers and corresponding methods of manufacture (2021-06-08),
12. 11031466 - Method of forming oxygen inserted Si-layers in power semiconductor devices (2021-06-08),
13. 10991812 - Transistor device with a rectifier element between a field electrode and a source electrode (2021-04-27),
14. 10971449 - Semiconductor device with metallization structure on opposite sides of a semiconductor portion (2021-04-06),
15. 10903321 - Semiconductor device and method of manufacturing a semiconductor device using an alignment layer (2021-01-26),

Title: The Innovative Journey of Martin Poelzl

Introduction: Martin Poelzl, a talented inventor hailing from Ossiach, Austria, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: Martin Poelzl's latest patents include cutting-edge solutions in the realm of renewable energy and sustainable transportation, showcasing his commitment to creating a greener future.

Career Highlights: With a career spanning over two decades, Martin Poelzl has established himself as a visionary inventor with a keen eye for identifying gaps in the market and developing unique solutions to address them. His innovative spirit has led to the successful commercialization of several groundbreaking technologies.

Collaborations: Throughout his career, Martin Poelzl has collaborated with leading research institutions, universities, and tech companies to bring his inventions to life. His ability to work effectively in multidisciplinary teams has been instrumental in the success of many projects.

Conclusion: Martin Poelzl's passion for innovation, coupled with his technical expertise, has solidified his position as a prominent figure in the world of inventors. His relentless pursuit of excellence continues to inspire the next generation of innovators worldwide.

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