The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2022
Filed:
Dec. 17, 2019
Applicant:
Infineon Technologies Austria Ag, Villach, AT;
Inventors:
Robert Paul Haase, San Pedro, CA (US);
Jyotshna Bhandari, Villach, AT;
Heimo Hofer, Bodensdorf, AT;
Ling Ma, Redondo Beach, CA (US);
Ashita Mirchandani, Torrance, CA (US);
Harsh Naik, El Segundo, CA (US);
Martin Poelzl, Ossiach, AT;
Martin Henning Vielemeyer, Villach, AT;
Britta Wutte, Feistritz, AT;
Assignee:
Infineon Technologies Austria AG, Villach, AT;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 29/4236 (2013.01); H01L 29/456 (2013.01); H01L 29/66734 (2013.01);
Abstract
A transistor device with a gate electrode in a vertical gate trench is described. The gate electrode includes a silicon gate region and a metal inlay region. The silicon gate region forms at least a section of a sidewall of the gate electrode. The metal inlay region extends up from a lower end of the gate electrode.