The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2023
Filed:
Jul. 16, 2020
Infineon Technologies Austria Ag, Villach, AT;
Martin Poelzl, Ossiach, AT;
Robert Haase, San Pedro, CA (US);
Sylvain Leomant, Poertschach am Woerthersee, AT;
Maximilian Roesch, St. Magdalen, AT;
Ravi Keshav Joshi, Klagenfurt, AT;
Andreas Meiser, Sauerlach, DE;
Xiaoqiu Huang, Plano, TX (US);
Ling Ma, Redondo Beach, CA (US);
Infineon Technologies Austria AG, Villach, AT;
Abstract
A semiconductor device includes a source region and a drain region of a first conductivity type, a body region of a second conductivity type between the source region and the drain region, a gate configured to control current through a channel of the body region, a drift zone of the first conductivity type between the body region and the drain region, a superjunction structure formed by a plurality of regions of the second conductivity type laterally spaced apart from one another by intervening regions of the drift zone, and a diffusion barrier structure disposed along sidewalls of the regions of the second conductivity type of the superjunction structure. The diffusion barrier structure includes alternating layers of Si and oxygen-doped Si and a Si capping layer on the alternating layers of Si and oxygen-doped Si.