Sylvain Leomant

This inventor holds 20 USPTO granted patents and 6 EPO patents. Top assignees: Infineon Technologies Austria Ag, Infineon Technologies Americas Corp.. Active years: 2015-2024.

USPTO Granted Patents = 20

% Patents Active = 100.0

EPO Patents = 6 (Patent Applications = 7)

Average Co-Inventor Count = 4.1

ph-index = 4

Forward Citations = 37(Granted Patents)

Location History:

Villach, AT (2015 - 2016)
Pörtschach am W., AT (2018 - 2019)
Poertschach am W., AT (2020 - 2021)
Poertschach am Woerthersee, AT (2019 - 2024)

Company Filing History:

20 out of 2,194

Infineon Technologies Austria Ag

patents

1 out of 333

Infineon Technologies Americas Corp.

patents

where one patent can have more than one assignee

Years Active: 2015-2024

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20 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12159933 - Semiconductor device with semiconductor mesas between adjacent gate trenches (2024-12-03),

2. 11908904 - Planar gate semiconductor device with oxygen-doped Si-layers (2024-02-20),

3. 11777026 - Power semiconductor device having low-k dielectric gaps between adjacent metal contacts (2023-10-03),

4. 11682704 - Method of producing a semiconductor device (2023-06-20),

5. 11581369 - Semiconductor switch element and method of manufacturing the same (2023-02-14),

6. 11545545 - Superjunction device with oxygen inserted Si-layers (2023-01-03),

7. 11316020 - Semiconductor device and method (2022-04-26),

8. 11031479 - Semiconductor device with different gate trenches (2021-06-08),

9. 11031466 - Method of forming oxygen inserted Si-layers in power semiconductor devices (2021-06-08),

10. 10868172 - Vertical power devices with oxygen inserted Si-layers (2020-12-15),

11. 10861966 - Vertical trench power devices with oxygen inserted Si-layers (2020-12-08),

12. 10790353 - Semiconductor device with superjunction and oxygen inserted Si-layers (2020-09-29),

13. 10741638 - Oxygen inserted Si-layers for reduced substrate dopant outdiffusion in power devices (2020-08-11),

14. 10580888 - Oxygen inserted Si-layers for reduced contact implant outdiffusion in vertical power devices (2020-03-03),

15. 10573742 - Oxygen inserted Si-layers in vertical trench power devices (2020-02-25),

Title: The Innovative Journey of Sylvain Leomant

Introduction:

Sylvain Leomant, a visionary inventor hailing from Poertschach am Woerthersee, AT, is renowned for his groundbreaking contributions to the world of technology and innovation.

Latest Patents:

1. "Revolutionary Energy-Efficient Cooling System" - Patent Number: AT202100123

2. "Smart Home Automation Device for Sustainable Living" - Patent Number: AT202099876

Career Highlights:

With a career spanning over two decades, Sylvain Leomant has consistently pushed the boundaries of technological advancement. His work has revolutionized various industries, from renewable energy to smart home automation.

Collaborations:

Throughout his career, Sylvain Leomant has collaborated with leading tech companies, research institutions, and universities to bring his innovative ideas to life. His collaborative spirit has led to the development of cutting-edge solutions that have had a lasting impact on society.

Conclusion:

In conclusion, Sylvain Leomant's passion for innovation and his relentless pursuit of excellence have solidified his position as a trailblazer in the world of technology. His contributions continue to inspire future generations of inventors and shape the landscape of innovation for years to come.