The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 26, 2022

Filed:

Sep. 05, 2019
Applicant:

Infineon Technologies Austria Ag, Villach, AT;

Inventors:

Sylvain Leomant, Poertschach am Woerthersee, AT;

Georg Ehrentraut, Villach, AT;

Maximilian Roesch, St. Magdalen, AT;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/40 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 21/02 (2006.01); H01L 21/765 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 29/407 (2013.01); H01L 21/02164 (2013.01); H01L 21/02236 (2013.01); H01L 21/02274 (2013.01); H01L 21/765 (2013.01); H01L 29/1095 (2013.01); H01L 29/408 (2013.01); H01L 29/7813 (2013.01); H01L 29/7397 (2013.01);
Abstract

In an embodiment, a semiconductor device includes a semiconductor substrate having a first major surface, a trench extending from the first major surface into the semiconductor substrate and having a base and a side wall extending form the base to the first major surface, and a field plate arranged in the trench and an enclosed cavity in the trench. The enclosed cavity is defined by insulating material and is laterally positioned between a side wall of the field plate and the side wall of the trench.


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