The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2020
Filed:
Dec. 18, 2019
Infineon Technologies Austria Ag, Villach, AT;
Oliver Blank, Villach, AT;
Thomas Feil, Villach, AT;
Maximilian Roesch, St. Magdalen, AT;
Martin Poelzl, Ossiach, AT;
Robert Haase, San Pedro, CA (US);
Sylvain Leomant, Poertschach am Woerthersee, AT;
Bernhard Goller, Villach, AT;
Andreas Meiser, Sauerlach, DE;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A semiconductor device includes: a gate trench extending into a Si substrate; a body region in the Si substrate, the body region including a vertical channel region adjacent a sidewall of the gate trench; a source region in the Si substrate above the body region; a contact trench extending into the Si substrate and separated from the gate trench by a portion of the source region and by a portion of the body region; an electrically conductive material in the contact trench; and a diffusion barrier structure interposed between a sidewall of the contact trench and the vertical channel region, the diffusion barrier structure including alternating layers of Si and oxygen-doped Si and configured to increase carrier mobility within the vertical channel region. Corresponding methods of manufacture are also described.