Xiaoqiu Huang

Title: Innovations by Inventor Xiaoqiu Huang

Introduction

Xiaoqiu Huang is a prominent inventor based in Plano, Texas, known for her contributions to semiconductor technology. With a total of two patents to her name, she has made significant advancements in the field of superjunction devices.

Latest Patents

Her latest patents include a "Superjunction device with oxygen inserted Si-layers" and a "Semiconductor device with superjunction and oxygen inserted Si-layers." Both patents describe a semiconductor device that features a source region and a drain region of a first conductivity type, a body region of a second conductivity type, and a gate that controls current through the channel of the body region. The devices also incorporate a drift zone of the first conductivity type and a superjunction structure formed by multiple regions of the second conductivity type, which are laterally spaced apart by intervening regions of the drift zone. A diffusion barrier structure is included along the sidewalls of the regions of the second conductivity type, consisting of alternating layers of silicon and oxygen-doped silicon, capped with a silicon layer.

Career Highlights

Xiaoqiu Huang is currently employed at Infineon Technologies Austria AG, where she continues to innovate in semiconductor technology. Her work has been instrumental in enhancing the performance and efficiency of semiconductor devices.

Collaborations

Xiaoqiu has collaborated with notable colleagues, including Martin Poelzl and Robert Paul Haase, contributing to a dynamic and innovative work environment.

Conclusion

Xiaoqiu Huang's contributions to semiconductor technology through her patents and work at Infineon Technologies highlight her role as a leading inventor in her field. Her innovations continue to shape the future of semiconductor devices.