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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10971449 B1

PDFFull Text
Date of Patent:
Apr. 06, 2021

Filed:

Dec. 20, 2019

Semiconductor device with metallization structure on opposite sides of a semiconductor portion

Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Paul Ganitzer, Finkenstein, AT;

Martin Poelzl, Ossiach, AT;

Assignee:

INFINEON TECHNOLOGIES AG, Neubiberg, DE;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Edward Chin

Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 23/535 (2006.01); H01L 21/78 (2006.01); H01L 23/495 (2006.01); H01L 21/48 (2006.01); H01L 29/78 (2006.01); H01L 23/482 (2006.01); H01L 21/683 (2006.01); H01L 21/3213 (2006.01); H01L 23/31 (2006.01); H01L 29/40 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H01L 21/32139 (2013.01); H01L 21/4857 (2013.01); H01L 21/6836 (2013.01); H01L 21/78 (2013.01); H01L 23/482 (2013.01); H01L 23/49527 (2013.01); H01L 23/49551 (2013.01); H01L 23/49562 (2013.01); H01L 23/49575 (2013.01); H01L 23/535 (2013.01); H01L 23/53238 (2013.01); H01L 29/7813 (2013.01); H01L 23/3107 (2013.01); H01L 23/562 (2013.01); H01L 29/404 (2013.01); H01L 29/407 (2013.01); H01L 2224/48091 (2013.01);
Abstract

A semiconductor device includes a semiconductor layer with a thickness of at most 50 μm. A first metallization structure is disposed on a first surface of the semiconductor layer. The first metallization structure includes a first copper region with a first thickness. A second metallization structure is disposed on a second surface of the semiconductor layer opposite to the first surface. The second metallization structure includes a second copper region with a second thickness. The total thickness, which is the sum of the first thickness and the second thickness, deviates from the thickness of the semiconductor layer by not more than 20% and a difference between the first thickness and the second thickness is not more than 20% of the total thickness.

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