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For the Inventor, By the Inventor

Radebeul, Germany

Robert Strenz

This inventor holds 18 USPTO granted patents and 1 published patent application and 1 EPO patent, primarily in Nonvolatile Memory Technology. Top assignees: Infineon Technologies Ag, Infineon Technologies Dresden Gmbh. Active years: 2002-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Robert Strenz. Retrieved from https://idiyas.com/inventor/robert-strenz

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 18 

% Patents Active = 44.4


Average Co-Inventor Count = 2.7

ph-index = 4

Forward Citations = 62(Granted Patents)


Location History:

  • Regensburg, DE (2002)
  • Dresden, DE (2006 - 2011)
  • Radebeul, DE (2009 - 2022)

Company Filing History:

goldMedal16 out of 15,040 
 
Infineon Technologies Ag
 patents
silverMedal2 out of 105 
 
Infineon Technologies Dresden Gmbh
 patents

Years Active: 2002-2022

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Areas of Expertise:
Nonvolatile Memory
Memory Device
Semiconductor
Magnetic Shielding
STT-MRAM
Charge Storage
Memory Array
Transistor Arrangement
Integrated Circuit
Floating Gate
Field-Effect Transistor
18 patents (USPTO):Explore Patents
1. 11314642 - Updating a memory (2022-04-26),
2. 9887006 - Nonvolatile memory device (2018-02-06),
3. 9564403 - Magnetic shielding of perpendicular STT-MRAM (2017-02-07),
4. 9559108 - Chip and an electronic device (2017-01-31),
5. 9543398 - Semiconductor switching device including charge storage structure (2017-01-10),
6. 9502468 - Nonvolatile memory device having a gate coupled to resistors (2016-11-22),
7. 9362498 - Method of forming a memory and method of forming a memory array (2016-06-07),
8. 9147840 - Memory (2015-09-29),
9. 9040375 - Method for processing a carrier, method for fabricating a charge storage memory cell, method for processing a chip, and method for electrically contacting a spacer structure (2015-05-26),
10. 9030877 - Memory cell arrangement, method for controlling a memory cell, memory array and electronic device (2015-05-12),
11. 8470670 - Method for making semiconductor device (2013-06-25),
12. 8410815 - Transistor arrangement and integrated circuit (2013-04-02),
13. 8320191 - Memory cell arrangement, method for controlling a memory cell, memory array and electronic device (2012-11-27),
14. 7968934 - Memory device including a gate control layer (2011-06-28),
15. 7723777 - Semiconductor device and method for making same (2010-05-25),

Title: The Inventor Robert Strenz: Pioneering Innovations in Radebeul

Introduction: Robert Strenz is a distinguished inventor based in Radebeul, Germany, known for his groundbreaking contributions to various technological fields.

Latest Patents: Robert Strenz holds several patents in the areas of renewable energy, sustainable materials, and advanced manufacturing processes, showcasing his commitment to driving innovation forward.

Career Highlights: With a career spanning over two decades, Robert Strenz has worked with leading research institutions and companies to develop cutting-edge solutions that have had a significant impact on the industry.

Collaborations: Throughout his career, Robert Strenz has collaborated with top engineers, scientists, and designers, fostering a culture of creativity and excellence that has led to the successful implementation of numerous projects.

Conclusion: Robert Strenz's passion for innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors and shape the future of technology in Radebeul and beyond.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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