The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2010
Filed:
Aug. 12, 2008
Applicants:
John Power, Dresden, DE;
Mayk Roehrich, Dresden, DE;
Martin Stiftinger, Stockdorf, DE;
Robert Strenz, Radebeul, DE;
Inventors:
John Power, Dresden, DE;
Mayk Roehrich, Dresden, DE;
Martin Stiftinger, Stockdorf, DE;
Robert Strenz, Radebeul, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/94 (2006.01);
U.S. Cl.
CPC ...
Abstract
One or more embodiments, relate to a field effect transistor, comprising: a substrate; a gate stack disposed over the substrate, the gate stack comprising a gate electrode overlying a gate dielectric; and a sidewall spacer may be disposed over the substrate and laterally disposed from the gate stack, the spacer comprising a polysilicon material.