The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 22, 2016

Filed:

Mar. 06, 2014
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Robert Strenz, Radebeul, DE;

Robert Allinger, Unterhaching, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 45/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2436 (2013.01); G11C 13/0002 (2013.01); G11C 13/003 (2013.01); G11C 13/004 (2013.01); G11C 13/0007 (2013.01); G11C 13/0069 (2013.01); H01L 45/08 (2013.01); H01L 45/147 (2013.01); H01L 45/16 (2013.01); G11C 2013/0071 (2013.01); G11C 2013/0073 (2013.01); G11C 2213/71 (2013.01); G11C 2213/78 (2013.01); G11C 2213/79 (2013.01);
Abstract

A nonvolatile memory device having a first resistive element coupled between a common node and a bit line; a second resistive element coupled between the common node and a word line; and a pass transistor having a gate coupled to the common node, a first node coupled to a reference voltage, and a second node coupled to an output, wherein the word line is orthogonal to the bit line.


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