The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 27, 2012

Filed:

Mar. 14, 2008
Applicants:

Robert Strenz, Radebeul, DE;

Wolfram Langheinrich, Dresden, DE;

Mayk Roehrich, Dresden, DE;

Robert Wiesner, Bad Aibling, DE;

Inventors:

Robert Strenz, Radebeul, DE;

Wolfram Langheinrich, Dresden, DE;

Mayk Roehrich, Dresden, DE;

Robert Wiesner, Bad Aibling, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

In an embodiment of the invention, a memory cell arrangement includes a substrate and at least one memory cell including a charge storing memory cell structure and a select structure. The memory cell arrangement further includes a first doping well, a second doping well and a third doping well arranged within the substrate, wherein the charge storing memory cell structure is arranged in or above the first doping well, the first doping well is arranged within the second doping well, and the second doping well is arranged within the third doping well. The memory cell arrangement further includes a control circuit coupled with the memory cell and configured to control the memory cell such that the charge storing memory cell structure is programmed or erased by charging or discharging the charge storing memory cell structure via at least the first doping well.


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