The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2013
Filed:
Sep. 23, 2009
John Power, Dresden, DE;
Danny Pak-chum Shum, Poughkeepsie, NY (US);
Wolfgang Dickenscheid, Dresden, DE;
Robert Strenz, Radebeul, DE;
John Power, Dresden, DE;
Danny Pak-Chum Shum, Poughkeepsie, NY (US);
Wolfgang Dickenscheid, Dresden, DE;
Robert Strenz, Radebeul, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
One or more embodiments may relate to a method for making a semiconductor device, including: a method for making a semiconductor device, comprising: providing a substrate; forming a charge storage layer over the substrate; forming a control gate layer over the charge storage layer; forming a mask over the control gate layer; using the mask, etching the control gate layer and the charge storage layer; forming a select gate layer over the etched control gate layer and the etched charge storage layer; forming an additional layer over the select gate layer; etching the additional layer to form sidewall spacers over the select gate layer; and etching the select gate layer.