The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2009
Filed:
May. 23, 2006
Franz Hofmann, Munich, DE;
Richard Johannes Luyken, Munich, DE;
Wolfgang Roesner, Ottobrunn, DE;
Michael Specht, Munich, DE;
Martin Staedele, Ottobrunn, DE;
Franz Hofmann, Munich, DE;
Richard Johannes Luyken, Munich, DE;
Wolfgang Roesner, Ottobrunn, DE;
Michael Specht, Munich, DE;
Martin Staedele, Ottobrunn, DE;
Qimonda AG, München, DE;
Abstract
A semiconductor memory component comprises at least one memory cell. The memory cell comprises a semiconductor body comprised of a body region, a drain region and a source region, a gate dielectric, and a gate electrode. The body region comprises a first conductivity type and a depression between the source and drain regions, and the source and drain regions comprise a second conductivity type. The gate electrode is arranged at least partly in the depression and is insulated from the body, source, and drain regions by the gate dielectric. The body region further comprises a first continuous region with a first dopant concentration and a second continuous region with a second dopant concentration greater than the first dopant concentration. The first continuous region adjoins the drain region, the depression and the source region, and the second region is arranged below the first region and adjoins the first region.