The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2014
Filed:
Oct. 17, 2011
Holger Huesken, Munich, DE;
Anton Mauder, Kolbermoor, DE;
Hans-joachim Schulze, Taufkirchen, DE;
Wolfgang Roesner, Ottobrunn, DE;
Holger Huesken, Munich, DE;
Anton Mauder, Kolbermoor, DE;
Hans-Joachim Schulze, Taufkirchen, DE;
Wolfgang Roesner, Ottobrunn, DE;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A power semiconductor diode is provided. The power semiconductor diode includes a semiconductor substrate having a first emitter region of a first conductivity type, a second emitter region of a second conductivity type, and a drift region of the first conductivity type arranged between the first emitter region and the second emitter region. The drift region forms a pn-junction with the second emitter region. A first emitter metallization is in contact with the first emitter region. The first emitter region includes a first doping region of the first conductivity type and a second doping region of the first conductivity type. The first doping region forms an ohmic contact with the first emitter metallization, and the second doping region forms a non-ohmic contact with the first emitter metallization. A second emitter metallization is in contact with the second emitter region.