Hans-Joachim Schulze

Taufkirchen, Germany

Hans-Joachim Schulze

This inventor holds 627 USPTO granted patents and 69 published patent applications and 18 EPO patents, primarily in Power Semiconductor Devices (CPC class H01L29-1095). Top assignees: Infineon Technologies Ag, Infineon Technologies Austria Ag, Siemens Aktiengesellschaft. Active years: 1988-2026. Education: University of Wurzburg (Germany).

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hans-Joachim Schulze. Retrieved from https://idiyas.com/inventor/hans-joachim-schulze

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Graduated from:
  • University of Wurzburg (Germany)
Calculating rank
USPTO Granted Patents = 627 

% Patents Active = 75.8

 

Average Co-Inventor Count = 3.3

ph-index = 14

Forward Citations = 1,273(Granted Patents)

Forward Citations (Not Self Cited) = 932(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Anzing, DE (1988 - 1989)
  • 85521 Ottobrunn, DE (2005)
  • Ottoburn, DE (2011)
  • Ottobrunn, DE (1991 - 2020)
  • Taufkirchen, DE (2009 - 2024)

Company Filing History:


Years Active: 1988-2026

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Areas of Expertise:
Power Semiconductor Device
Silicon Carbide
Insulated Gate Bipolar Transistor
Epitaxial Silicon Carbide
Ferroelectric Gate Stack
Trench Structure
Ohmic Contacts
Multi-Device Chip
Wide Band Gap Semiconductor
Ion Beam Implantation
Field Stop Region
Diode Structure
627 patents (USPTO):Explore Patents

Title: Hans-Joachim Schulze: Innovating the Semiconductor Industry

Introduction:

Hans-Joachim Schulze is a renowned semiconductor engineer from Taufkirchen, Germany. He has made significant contributions to the field through his numerous patents and inventions. With a total of 581 patents to his name, Schulze stands as a prominent figure in the world of semiconductor device manufacturing and silicon carbide technology.

Latest Patents:

Among his latest patents, one notable invention is the "Method for manufacturing a semiconductor device." This method involves the fabrication of a semiconductor device with precise control over the diffusion of dopant species, resulting in optimized performance. The patent describes a process that forms a pn-junction between the source and body regions at a specific depth below the first major surface, improving overall device functionality. Another recent patent is on the "Silicon carbide device with compensation region and method of manufacturing," focusing on the optimization of silicon carbide substrate for enhanced performance.

Career Highlights:

Hans-Joachim Schulze has an impressive career trajectory, having worked with renowned companies such as Infineon Technologies AG and Siemens Aktiengesellschaft. During his tenure, he has contributed significantly to the development of semiconductor manufacturing techniques, earning him recognition as a key industry professional. With a consistent focus on innovation and improvement, Schulze continues to push the boundaries of technological advancements in the semiconductor field.

Collaborations:

Throughout his career, Schulze has collaborated with several notable individuals. Among his esteemed colleagues are Anton Mauder and Johannes Georg Laven. These collaborations have fostered an environment of knowledge exchange, facilitating the development of cutting-edge technologies and advancements within the industry.

Conclusion:

Hans-Joachim Schulze's extensive patent portfolio and significant contributions to the semiconductor industry have positioned him as a leading innovator. His expertise in the manufacturing of semiconductor devices and silicon carbide substrates has played a critical role in shaping the field's development. The ongoing efforts of visionaries like Schulze continue to drive advancements in the semiconductor industry, propelling us towards a more technologically advanced future.

Note: The article provides a brief overview of Hans-Joachim Schulze's achievements based on the given information. Additional research and information may be required to present a comprehensive account of his contributions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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