The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2026
Filed:
Jul. 28, 2023
Infineon Technologies Ag, Neubiberg, DE;
Francisco Javier Santos Rodriguez, Villach, AT;
Roman Baburske, Otterfing, DE;
Hans-Joachim Schulze, Taufkirchen, DE;
Daniel Schlögl, Villach, AT;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A power semiconductor device includes at a first side and electrically isolated from first and second load terminals, first control electrodes for controlling a load current in first semiconductor channel structures formed in an active region at the first side, and at a second side and electrically isolated from the first and second load terminals, second control electrodes for controlling the load current in second semiconductor channel structures formed in the active region at the second side. At the second side and in a contiguous area of modified control (AMC) belonging to the active region and having a lateral extension of at least 30% of a thickness of a semiconductor body of the device, either no second control electrodes are provided or the second control electrodes are less effective in removing free charge carriers out of the power semiconductor device than the second control electrodes outside the AMC.