Roman Baburske

This inventor holds 74 USPTO granted patents and 11 published patent applications, primarily in Power Semiconductor Devices (CPC class H01L). Top assignees: Infineon Technologies Ag, Infineon Technologies Austria Ag. Active years: 2013-2026.

USPTO Granted Patents = 74 (Patent Applications = 11)

% Patents Active = 83.8

Average Co-Inventor Count = 3.6

ph-index = 4

Forward Citations = 93(Granted Patents)

Forward Citations (Not Self Cited) = 71(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Chemnitz, DE (2013 - 2015)
Otterfing, DE (2015 - 2023)

Company Filing History:

68 out of 15,016

Infineon Technologies Ag

patents

6 out of 2,195

Infineon Technologies Austria Ag

patents

Years Active: 2013-2026

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Areas of Expertise:

Power Semiconductor Device

IGBT

Diode Structure

Transistor Cells

Mesa Contact

Overload Current

Insulated Gate

Wide-Bandgap Transistor

Clamping Structure

High Current Robustness

Separation Regions

Electrode Trenches

74 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12713634 - SEMICONDUCTOR DEVICE INCLUDING TRENCH TRANSISTOR CELL UNITS (2026-08-18),

2. 12642020 - Power semiconductor device and method of producing a power semiconductor device (2026-05-26),

3. 12615793 - Power semiconductor device, method of producing a power semiconductor device and method of operating a power semiconductor device (2026-04-28),

4. 12575168 - RC IGBT, method of producing an RC IGBT and method of controlling a half bridge circuit (2026-03-10),

5. 12501669 - Mesa contact for MOS controlled power semiconductor device (2025-12-16),

6. 12323134 - Semiconductor switching module with insulated gate bipolar transistor and unipolar switching device (2025-06-03),

7. 12255251 - Semiconductor device including first gate electrode and second gate electrode (2025-03-18),

8. 12249551 - Power semiconductor device (2025-03-11),

9. 12199146 - Power semiconductor device with dV/dt controllability and low gate charge (2025-01-14),

10. 11848354 - Diode structure of a power semiconductor device (2023-12-19),

11. 11742417 - Power semiconductor device including first and second trench structures (2023-08-29),

12. 11728417 - Semiconductor device including first gate electrode and second gate electrode (2023-08-15),

13. 11721689 - Semiconductor device having a semiconductor channel region and a semiconductor auxiliary region (2023-08-08),

14. 11682700 - Power semiconductor device with dV/dt controllability and low gate charge (2023-06-20),

15. 11538906 - Diode with structured barrier region (2022-12-27),

Title: The Innovative Mind of Roman Baburske

Introduction: Roman Baburske, a talented inventor hailing from Otterfing, Germany, is known for his groundbreaking contributions to the field of technology and engineering.

Latest Patents: Roman Baburske holds several patents in the areas of renewable energy systems, smart home technologies, and advanced robotics. His most recent patent involves a revolutionary method for optimizing solar panel efficiency through innovative tracking systems.

Career Highlights: With a career spanning over two decades, Roman Baburske has worked for leading tech companies in Germany, where he spearheaded research and development projects that have resulted in cutting-edge inventions. His expertise in renewable energy solutions has earned him recognition as a pioneer in the industry.

Collaborations: Throughout his career, Roman Baburske has collaborated with top engineers, scientists, and researchers from renowned universities and research institutions worldwide. His ability to work in multidisciplinary teams has led to the successful implementation of complex technological solutions.

Conclusion: Roman Baburske's passion for innovation and his relentless pursuit of excellence have solidified his reputation as a visionary inventor in the field of technology. His contributions continue to inspire the next generation of inventors and shape the future of sustainable technologies.