The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2025
Filed:
Jun. 22, 2023
Infineon Technologies Ag, Neubiberg, DE;
Roman Baburske, Otterfing, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A semiconductor device includes: a drift region of a first conductivity type in a semiconductor body having a first main surface; a body region of a second conductivity type between the drift region and the first main surface; and trenches extending into the semiconductor body from the first main surface and patterning the semiconductor body into mesas. The trenches include: a first trench having first and second electrodes that face one another along a lateral direction, and a dielectric arranged between the first and second electrodes; a second trench having first and second electrodes that face one another along a lateral direction, and a dielectric arranged between the first and second electrodes; and a third trench having first and second electrodes that face one another along a lateral direction, and a dielectric arranged between the first and second electrodes. Additional semiconductor device embodiments are described herein.