The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 03, 2025

Filed:

Feb. 28, 2023
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Roman Baburske, Otterfing, DE;

Frank Pfirsch, Munich, DE;

Jana Hänsel, Dresden, DE;

Katja Waschneck, Dresden, DE;

Assignee:

INFINEON TECHNOLOGIES AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/0812 (2006.01); H10D 12/00 (2025.01); H10D 62/10 (2025.01); H10D 62/832 (2025.01);
U.S. Cl.
CPC ...
H03K 17/08128 (2013.01); H10D 12/481 (2025.01); H10D 62/127 (2025.01); H10D 62/8325 (2025.01);
Abstract

A semiconductor switching module includes an insulated gate bipolar transistor and a unipolar switching device. The insulated gate bipolar transistor includes a first transistor cell and a supplemental cell, wherein the first transistor cell includes a first gate and a first source and wherein the supplemental cell includes a second gate and a supplemental electrode. The unipolar switching device is based on a wide bandgap material and includes a third gate and a third source. The third gate and the second gate are electrically connected with each other and are disconnected from the first gate. The first source, the supplemental cell and the third source are electrically connected with each other.


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