The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2025
Filed:
May. 11, 2022
Infineon Technologies Ag, Neubiberg, DE;
Roman Baburske, Otterfing, DE;
Moritz Hauf, Munich, DE;
Hans-Joachim Schulze, Taufkirchen, DE;
Holger Schulze, Villach, AT;
Benedikt Stoib, Feldkirchen-Westerham, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A power semiconductor device includes, an active area that conducts load current between first and second load terminal structures, a drift region, and a backside region that includes, inside the active area, first and second backside emitter zones one or both of which includes: first sectors having at least one first region of a second conductivity type contacting the second load terminal structure and a smallest lateral extension of at most 50 μm; and/or second sectors having a second region of the second conductivity type contacting the second load terminal structure and a smallest lateral extension of at least 50 μm. The emitter zones differ by at least of: the presence of first and/or second sectors; smallest lateral extension of first and/or second sectors; lateral distance between neighboring first and/or second sectors; smallest lateral extension of the first regions; lateral distance between neighboring first regions within the same first sector.