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Holger Schulze

This inventor holds 33 USPTO granted patents, primarily in Power Semiconductor Devices. Top assignees: Infineon Technologies Ag, Infineon Technologies Austria Ag. Active years: 2009-2026.

USPTO Granted Patents = 33

% Patents Active = 84.8

Average Co-Inventor Count = 4.7

ph-index = 5

Forward Citations = 59(Granted Patents)

Company Filing History:

24 out of 15,023

Infineon Technologies Ag

patents

9 out of 2,196

Infineon Technologies Austria Ag

patents

Years Active: 2009-2026

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Areas of Expertise:

Semiconductor Device

Power Semiconductor

Doped Zone

Field Stop Region

Vertical Edge Termination

Trench Structures

Metal Adhesion

Silicon Carbide

Charge Carrier Lifetime

Integrated Circuit

Thermal Annealing

Junctions

33 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12684789 - Semiconductor device including active diode area (2026-07-14),

2. 12513921 - Semiconductor device including a field stop region (2025-12-30),

3. 12426331 - Power semiconductor device and method of producing a power semiconductor device (2025-09-23),

4. 12249551 - Power semiconductor device (2025-03-11),

5. 11437471 - Power semiconductor device (2022-09-06),

6. 11410950 - Semiconductor substrate having a bond pad material based on aluminum (2022-08-09),

7. 10998402 - Semiconductor devices with steep junctions and methods of manufacturing thereof (2021-05-04),

8. 10957764 - Vertical semiconductor device (2021-03-23),

9. 10777506 - Silicon carbide semiconductor device having a metal adhesion and barrier structure and a method of forming such a semiconductor device (2020-09-15),

10. 10651037 - Method for fabricating a doped zone in a semiconductor body (2020-05-12),

11. 10475881 - Semiconductor devices with steep junctions and methods of manufacturing thereof (2019-11-12),

12. 10475743 - Semiconductor device having a metal adhesion and barrier structure and a method of forming such a semiconductor device (2019-11-12),

13. 10069016 - Semiconductor diode with trench structures and including doped layers and doped zones of opposite conductivity types providing high surge energy capacity (2018-09-04),

14. 10049912 - Method of manufacturing a semiconductor device having a vertical edge termination structure (2018-08-14),

15. 9972689 - Semiconductor device having a surface with ripples (2018-05-15),

Title: The Innovative Mind of Holger Schulze

Introduction: Holger Schulze, a distinguished inventor hailing from Villach, Austria, is renowned for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Schulze's latest patents showcase his expertise in developing cutting-edge solutions for renewable energy sources, with a focus on solar power optimization and energy storage systems.

Career Highlights: With a career spanning over two decades, Holger Schulze has consistently pushed the boundaries of technological advancement. His work in the development of smart grid solutions and sustainable energy technologies has earned him international recognition.

Collaborations: Schulze has collaborated with leading research institutions and universities worldwide to further his research in the field of renewable energy. His partnerships with key industry players have resulted in the successful implementation of innovative technologies in real-world applications.

Conclusion: Holger Schulze's passion for innovation and his relentless pursuit of technological excellence continue to inspire the next generation of inventors and engineers. His contributions to the field of renewable energy have significantly impacted the way we harness and utilize sustainable resources for a greener future.

Profile summary based on public USPTO records.

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