The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2018
Filed:
Feb. 03, 2017
Infineon Technologies Ag, Neubiberg, DE;
Alexander Breymesser, Villach, AT;
Andre Brockmeier, Villach, AT;
Elmar Falck, Hohenbrunn, DE;
Francisco Javier Santos Rodriguez, Villach, AT;
Holger Schulze, Villach, AT;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A method of manufacturing a semiconductor device includes forming a frame trench extending from a first surface into a base substrate, forming, in the frame trench, an edge termination structure comprising a glass structure, forming a conductive layer on the semiconductor substrate and the edge termination structure, and removing a portion of the conductive layer above the edge termination structure. A remnant portion of the conductive layer forms a conductive structure that covers a portion of the edge termination structure directly adjoining a sidewall of the frame trench.