The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
Aug. 05, 2022
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Damiano Cassese, Villach, AT;
Andreas Korzenietz, Putzbrunn, DE;
Holger Schulze, Villach, AT;
Frank Umbach, Munich, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 64/01 (2025.01); H10D 62/10 (2025.01); H10D 64/00 (2025.01);
U.S. Cl.
CPC ...
H10D 64/01 (2025.01); H10D 62/107 (2025.01); H10D 64/111 (2025.01);
Abstract
A method of producing a power semiconductor device includes: providing a semiconductor body; forming, at the semiconductor body, a polycrystalline semiconductor region; forming, at the polycrystalline semiconductor region, an amorphous sublayer; subjecting the amorphous sublayer to a re-crystallization processing step to form a re-crystallized sublayer; and forming a metal layer at the re-crystallized sublayer.