The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2022
Filed:
Dec. 11, 2020
Infineon Technologies Ag, Neubiberg, DE;
Roman Baburske, Otterfing, DE;
Moritz Hauf, Munich, DE;
Hans-Joachim Schulze, Taufkirchen, DE;
Holger Schulze, Villach, AT;
Benedikt Stoib, Feldkirchen-Westerham, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A power semiconductor device includes: a semiconductor body; a first load terminal structure coupled to the body front side and a second load terminal structure coupled to the body backside; an active area for conducting a load current between the load terminal structures; a drift region having a first conductivity type; a backside region arranged at the backside and including, inside the active area, first and second backside emitter zones. At least one of the backside emitter zones includes: first sectors each having at least one first region of a second conductivity type, the first region arranged in contact with the second load terminal structure and having a smallest lateral extension of at most 50 μm; and/or second sectors each having a second region of the second conductivity type arranged in contact with the second load terminal structure and having a smallest lateral extension of at least 50 μm.