The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2020
Filed:
Sep. 22, 2005
Hans-joachim Schulze, Ottobrunn, DE;
Anton Mauder, Kolbermoor, DE;
Helmut Strack, München, DE;
Holger Schulze, Villach, AT;
Hans-Joachim Schulze, Ottobrunn, DE;
Anton Mauder, Kolbermoor, DE;
Helmut Strack, München, DE;
Holger Schulze, Villach, AT;
Infineon Technologies AG, Neubiberg, DE;
Abstract
One embodiment of the invention relates to a method for fabricating a doped semiconductor zone in a semiconductor body. The method includes implanting dopant particles via one side into the semiconductor body or applying a layer containing dopant particles to one side of the semiconductor body. The method also includes irradiating the semiconductor body via the one side with further particles at least in the region containing the dopant particles. The method finally includes carrying out a thermal treatment by means of which the semiconductor body is heated, at least in the region containing the dopant particles, to a predetermined temperature in order to activate the implanted dopant particles, said temperature being less than 700° C.