The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2019
Filed:
Aug. 01, 2017
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Alexander Breymesser, Villach, AT;
Hans-Joachim Schulze, Taufkirchen, DE;
Holger Schulze, Villach, AT;
Werner Schustereder, Villach, AT;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/268 (2006.01); H01L 21/324 (2006.01); H01L 29/08 (2006.01); H01L 29/167 (2006.01); H01L 29/739 (2006.01); H01L 29/861 (2006.01); H01L 29/36 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0638 (2013.01); H01L 21/268 (2013.01); H01L 21/324 (2013.01); H01L 29/0834 (2013.01); H01L 29/167 (2013.01); H01L 29/36 (2013.01); H01L 29/7395 (2013.01); H01L 29/861 (2013.01); H01L 29/8611 (2013.01); H01L 21/2652 (2013.01); H01L 29/0623 (2013.01);
Abstract
Crystal lattice vacancies are generated in a pretreated section of a semiconductor layer directly adjoining a process surface. Dopants are implanted at least into the pretreated section. A melt section of the semiconductor layer is heated by irradiating the process surface with a laser beam activating the implanted dopants at least in the melt section.