The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 12, 2019

Filed:

Mar. 14, 2017
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Frank Hille, Munich, DE;

Ravi Keshav Joshi, Villach, AT;

Michael Fugger, Landskron, AT;

Oliver Humbel, Maria Elend, AT;

Thomas Laska, Munich, DE;

Matthias Mueller, Regensburg, DE;

Roman Roth, Sattendorf, AT;

Carsten Schaeffer, Annenheim, AT;

Hans-Joachim Schulze, Taufkirchen, DE;

Holger Schulze, Villach, AT;

Juergen Steinbrenner, Noetsch, AT;

Frank Umbach, Munich, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53209 (2013.01); H01L 21/76846 (2013.01); H01L 21/76861 (2013.01); H01L 21/76898 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01);
Abstract

According to an embodiment of a semiconductor device, the semiconductor devices includes a metal structure electrically connected to a semiconductor body and a metal adhesion and barrier structure between the metal structure and the semiconductor body. The metal adhesion and barrier structure includes a first layer having titanium and tungsten, and a second layer having titanium, tungsten, and nitrogen on the first layer having titanium and tungsten.


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