The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 23, 2021

Filed:

Apr. 06, 2015
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Franz Josef Niedernostheide, Hagen am Teutoburger Wald, DE;

Manfred Pfaffenlehner, Munich, DE;

Hans-Joachim Schulze, Taufkirchen, DE;

Holger Schulze, Villach, AT;

Frank Umbach, Munich, DE;

Christoph Weiss, Munich, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01); H01L 29/40 (2006.01); H01L 29/861 (2006.01); H01L 23/31 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0696 (2013.01); H01L 23/3157 (2013.01); H01L 29/0615 (2013.01); H01L 29/0619 (2013.01); H01L 29/0834 (2013.01); H01L 29/1095 (2013.01); H01L 29/404 (2013.01); H01L 29/6634 (2013.01); H01L 29/66128 (2013.01); H01L 29/66333 (2013.01); H01L 29/66712 (2013.01); H01L 29/66727 (2013.01); H01L 29/7395 (2013.01); H01L 29/7396 (2013.01); H01L 29/7811 (2013.01); H01L 29/8611 (2013.01); H01L 29/0638 (2013.01); H01L 29/1608 (2013.01); H01L 29/20 (2013.01); H01L 29/2003 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A semiconductor body includes first and second opposing surfaces, an edge extending in a vertical direction substantially perpendicular to the first surface, an active area, a peripheral area arranged in a horizontal direction substantially parallel to the first surface between the active area and edge, and a pn-junction extending from the active area into the peripheral area. In the peripheral area the semiconductor device further includes a first conductive region arranged next to the first surface, a second conductive region arranged next to the first surface, and arranged in the horizontal direction between the first conductive region and edge, and a passivation structure including a first portion at least partly covering the first conductive region, a second portion at least partly covering the second conductive region. The first portion has a different layer composition than the second portion and/or a thickness which differs from the thickness of the second portion.


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