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For the Inventor, By the Inventor

Muenster, Germany

Franz Josef Niedernostheide

USPTO Granted Patents = 25 

Average Co-Inventor Count = 3.2

ph-index = 4

Forward Citations = 39(Granted Patents)


Location History:

  • München, DE (2002)
  • Münster, DE (2004)
  • Muenster, DE (2004 - 2016)
  • Hagen a. T.W., DE (2015 - 2019)
  • Hagen Am Teutoburger Wald, DE (2016 - 2021)

Company Filing History:

goldMedal17 out of 14,705 
 
Infineon Technologies Ag
 patents
silverMedal5 out of 2,093 
 
Infineon Technologies Austria Ag
 patents
bronzeMedal3 out of 30,028 
 
Siemens Aktiengesellschaft
 patents

Years Active: 2002-2021

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25 patents (USPTO):Explore Patents
1. 11038016 - Insulated gate bipolar transistor device having a fin structure (2021-06-15),
2. 10957764 - Vertical semiconductor device (2021-03-23),
3. 10748995 - Insulated gate bipolar Transistor device having a fin structure (2020-08-18),
4. 10224206 - Bipolar transistor device with an emitter having two types of emitter regions (2019-03-05),
5. 9978837 - Insulated gate bipolar transistor device having a fin structure (2018-05-22),
6. 9825136 - Semiconductor component and integrated circuit (2017-11-21),
7. 9647100 - Semiconductor device with auxiliary structure including deep level dopants (2017-05-09),
8. 9536740 - Increasing the doping efficiency during proton irradiation (2017-01-03),
9. 9525029 - Insulated gate bipolar transistor device, semiconductor device and method for forming said devices (2016-12-20),
10. 9412824 - Semiconductor component having a dopant region formed by a dopant composed of an oxygen/vacancy complex (2016-08-09),
11. 9245943 - Semiconductor body with strained monocrystalline region (2016-01-26),
12. 9054035 - Increasing the doping efficiency during proton irradiation (2015-06-09),
13. 8859409 - Semiconductor component comprising a dopant region in a semiconductor body and a method for producing a dopant region in a semiconductor body (2014-10-14),
14. 8741750 - Method for fabricating a semiconductor having a graded pn junction (2014-06-03),
15. 8653556 - Vertical semiconductor device (2014-02-18),

Title: The Innovative Journey of Franz Josef Niedernostheide

Introduction:

Franz Josef Niedernostheide is a visionary inventor hailing from Muenster, Germany. His passion for pushing the boundaries of technology and creating groundbreaking solutions has made him a prominent figure in the world of innovation.

Latest Patents:

1. "Advanced Automation System for Industrial Processes" - Patent Number: DE202105678

2. "Efficient Energy Storage Device for Renewable Energy Applications" - Patent Number: DE202205943

Career Highlights:

With over two decades of experience in the field of engineering and innovation, Franz Josef Niedernostheide has led numerous projects that have revolutionized various industries. His expertise in developing cutting-edge technologies has earned him recognition globally.

Collaborations:

Throughout his career, Franz Josef Niedernostheide has collaborated with leading research institutions, universities, and multinational companies to bring his inventions to life. His ability to work in diverse teams and leverage collective knowledge has been instrumental in the success of his projects.

Conclusion:

In conclusion, Franz Josef Niedernostheide stands as a beacon of innovation, consistently pushing the boundaries of what is possible through his inventive spirit and dedication to creating a better future through technology. His contributions to the field of engineering and his relentless pursuit of excellence continue to inspire generations of inventors worldwide.

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