The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2016
Filed:
Jun. 12, 2015
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Christian Philipp Sandow, Haar, DE;
Franz Josef Niedernostheide, Hagen Am Teutoburger Wald, DE;
Vera van Treek, Unterhaching, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1095 (2013.01); H01L 29/0676 (2013.01); H01L 29/42356 (2013.01); H01L 29/7396 (2013.01);
Abstract
An insulated gate bipolar transistor device includes a semiconductor substrate having a drift region of an insulated gate bipolar transistor structure. Further, the insulated gate bipolar transistor device includes a first nanowire structure and a first gate structure. The first nanowire structure of the insulated gate bipolar transistor structure is connected to the drift region, and the first gate structure of the insulated gate bipolar transistor structure extends along at least a part of the first nanowire structure.