The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2016
Filed:
Sep. 09, 2014
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Thomas Neidhart, Klagenfurt, DE;
Franz Josef Niedernostheide, Muenster, DE;
Hans-Joachim Schulze, Taufkirchen, DE;
Werner Schustereder, Villach, AT;
Alexander Susiti, Stadelach, AT;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/861 (2006.01); H01L 29/167 (2006.01); H01L 29/32 (2006.01); H01L 29/36 (2006.01); H01L 29/06 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 29/167 (2013.01); H01L 21/265 (2013.01); H01L 29/0603 (2013.01); H01L 29/32 (2013.01); H01L 29/36 (2013.01); H01L 29/7393 (2013.01); H01L 29/7801 (2013.01); H01L 29/861 (2013.01); H01L 21/26506 (2013.01);
Abstract
A semiconductor component includes a semiconductor body having a first side and a second side opposite the first side. In the semiconductor body, a dopant region is formed by a dopant composed of an oxygen complex. The dopant region extends over a section L having a length of at least 10 μm along a direction from the first side to the second side. The dopant region has an oxygen concentration in a range of 1×10cmto 5×10cmover the section L.